HGTG18N120BND - IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	HGTG18N120BND
Manufacturer	ON Semiconductor
File Size	426.40 KB
Description	IGBT
Datasheet	HGTG18N120BND Datasheet
Additional preview pages of the HGTG18N120BND datasheet.

Product details

Description

HGTG18N120BND is based on Non Punch Through (NPT) IGBT designs.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

Features

26 A, 1200 V, TC = 110°C.
Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A.
Typical Fall Time.
. . . 140 ns at TJ = 150°C.
Short Circuit Rating.
Low Conduction Loss.
This Device is Pb.
Free www. onsemi. com C G E E C G TO.
247.
3LD CASE 340CK.

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Published: Oct 2, 2022 |