HGTG18N120BND Datasheet, Igbt, ON Semiconductor

✔ HGTG18N120BND Features

26 A, 1200 V, TC = 110°C
Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C
Short Circuit Rati

✔ HGTG18N120BND Application

operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, m

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Igbt. HGTG18N120BND is based on Non* Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications opera

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