Datasheet Details
- Part number
- HGTG18N120BND
- Manufacturer
- ON Semiconductor ↗
- File Size
- 426.40 KB
- Datasheet
- HGTG18N120BND-ONSemiconductor.pdf
- Description
- IGBT
HGTG18N120BND Description
IGBT - NPT 1200 V HGTG18N120BND .
HGTG18N120BND is based on Non.
Punch Through (NPT) IGBT
designs.
HGTG18N120BND Features
* 26 A, 1200 V, TC = 110°C
* Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
* Typical Fall Time
* . . . 140 ns at TJ = 150°C
* Short Circuit Rating
* Low Conduction Loss
* This Device is Pb
* Free
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