* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switch
HGTG20N60B3 Datasheet (420.81 KB)
HGTG20N60B3
420.81 KB
N-channel igbt.
UFS Series N-Channel IGBTs
40 A, 600 V
HGTG20N60B3
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best fea.
📁 Related Datasheet
HGTG20N60B3 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60B3 N-Channel IGBT (Intersil Corporation)
HGTG20N60B3D N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60B3D N-Channel IGBT (Intersil Corporation)
HGTG20N60B3D N-Channel IGBT (ON Semiconductor)
HGTG20N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4 N-Channel IGBT (Intersil Corporation)
HGTG20N60A4 IGBT (ON Semiconductor)
HGTG20N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4D N-Channel IGBT (ON Semiconductor)
