HGTG20N60B3 Datasheet - ON Semiconductor

HGTG20N60B3 N-Channel IGBT

HGTG20N60B3 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switch

Datasheet Details

HGTG20N60B3

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N-channel igbt.

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HGTG20N60B3 HGTG20N60B3 N-Channel IGBT ON Semiconductor