Part number:
HGTG27N120BN
Manufacturer:
File Size:
385.34 KB
Description:
N-channel igbt.
HGTG27N120BN-ONSemiconductor.pdf
Datasheet Details
HGTG27N120BN Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, s
HGTG27N120BN-ONSemiconductor.pdf
Datasheet Details
HGTG27N120BN
385.34 KB
N-channel igbt.
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HGTG27N120BN Distributor