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HGTG27N120BN Datasheet - ON Semiconductor

HGTG27N120BN - N-Channel IGBT

HGTG27N120BN Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, s

HGTG27N120BN-ONSemiconductor.pdf

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Datasheet Details

Part number:

HGTG27N120BN

Manufacturer:

ON Semiconductor ↗

File Size:

385.34 KB

Description:

N-channel igbt.

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