Part number:
HGTG10N120BND
Manufacturer:
File Size:
436.10 KB
Description:
N-channel igbt.
HGTG10N120BND-ONSemiconductor.pdf
Datasheet Details
Part number:
HGTG10N120BND
Manufacturer:
File Size:
436.10 KB
Description:
N-channel igbt.
HGTG10N120BND, N-Channel IGBT
Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A IC110 17 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 15
HGTG10N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switch
📁 Related Datasheet
📌 All Tags