HGTG10N120BND Datasheet (ON Semiconductor)

HGTG10N120BND, N-Channel IGBT

Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A IC110 17 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 15

HGTG10N120BND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switch