HGTG10N120BND - N-Channel IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	HGTG10N120BND
Manufacturer	ON Semiconductor
File Size	436.10 KB
Description	N-Channel IGBT
Datasheet	HGTG10N120BND Datasheet
Additional preview pages of the HGTG10N120BND datasheet.

Product details

Description

Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A IC110 17 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (Figure 2) Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C ICM VGES VGEM SSOA PD 80 ±20 ±30 55 A at 1200 V 298 2.38 A V V W W/°C Operating and Storage Junction Temper

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching.

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Published: Oct 3, 2022 |