Datasheet Details
- Part number
- HGTG10N120BND
- Manufacturer
- ON Semiconductor ↗
- File Size
- 436.10 KB
- Datasheet
- HGTG10N120BND-ONSemiconductor.pdf
- Description
- N-Channel IGBT
HGTG10N120BND Description
NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35 A, 1200 V HGTG10N120BND The HGTG10N120BND is a Non *Punch Through (NPT) IGBT de.
Symbol
HGTG10N120BND
Units
Collector to Emitter Voltage
Collector Current Continuous At TC = 25°C At TC = 110°C
BVCES
1200
V
IC25
35
A
IC11.
HGTG10N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switch
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