Datasheet Details
- Part number
- HGTG20N60A4D
- Manufacturer
- ON Semiconductor ↗
- File Size
- 381.10 KB
- Datasheet
- HGTG20N60A4D-ONSemiconductor.pdf
- Description
- N-Channel IGBT
HGTG20N60A4D Description
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combini.
HGTG20N60A4D Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. Th
📁 Related Datasheet
📌 All Tags