HGTG12N60A4D Datasheet - ON Semiconductor

HGTG12N60A4D N-Channel IGBT

HGTG12N60A4D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335.

Datasheet Details

HGTG12N60A4D

580.48 KB

N-channel igbt.

HGTG12N60A4D Distributor

📁 Related Datasheet

HGTG12N60A4 N-Channel IGBT (Fairchild Semiconductor)

HGTG12N60A4 N-Channel IGBT (Intersil Corporation)

HGTG12N60A4D N-Channel IGBT (Fairchild Semiconductor)

HGTG12N60A4D N-Channel IGBT (Intersil Corporation)

HGTG12N60B3 N-Channel IGBT (Fairchild Semiconductor)

HGTG12N60B3D N-Channel IGBT (Fairchild Semiconductor)

HGTG12N60B3D N-Channel IGBT (Intersil Corporation)

HGTG12N60C3D N-Channel IGBT (Fairchild Semiconductor)

TAGS

HGTG12N60A4D HGTG12N60A4D N-Channel IGBT ON Semiconductor