Datasheet Details
- Part number
- HGTG12N60A4D
- Manufacturer
- ON Semiconductor ↗
- File Size
- 580.48 KB
- Datasheet
- HGTG12N60A4D-ONSemiconductor.pdf
- Description
- N-Channel IGBT
HGTG12N60A4D Description
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1.
HGTG12N60A4D Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335.
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