HGT1S7N60A4DS, HGTG7N60A4D - N-Channel IGBT

ON Semiconductor

HGT1S7N60A4DS Datasheet Preview — This datasheet PDF includes multiple part numbers: HGT1S7N60A4DS, HGTG7N60A4D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	HGT1S7N60A4DS, HGTG7N60A4D
Manufacturer	ON Semiconductor ↗
File Size	537.51 KB
Description	N-Channel IGBT
Datasheet	HGTG7N60A4D-ONSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HGT1S7N60A4DS, HGTG7N60A4D. Please refer to the document for exact specifications by model.

HGT1S7N60A4DS Product details

Description

Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (Figure 1) Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C ICM VGES VGEM SSOA PD 56 ±20 ±30 35 A at 600 V 125 1.0 A V V W W/°C Operating and Storage Junction Temperature R

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331. The diode used in anti.
parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

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Published: Oct 3, 2022 |