HGT1S7N60A4DS Datasheet, Igbt, ON Semiconductor

HGT1S7N60A4DS Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
• state conduction loss of a bipolar transistor. The much lower on
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HGT1S7N60A4DS

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ON Semiconductor ↗

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📄 Datasheet

Description:

N-channel igbt. Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25

HGT1S7N60A4DS Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

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HGT1S7N60A4DS

ON Semiconductor

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