HGTG7N60A4D-ONSemiconductor.pdf
Datasheet Details
Part number:
HGT1S7N60A4DS, HGTG7N60A4D
Manufacturer:
File Size:
537.51 KB
Description:
N-channel igbt.
Note:
This datasheet PDF includes multiple part numbers: HGT1S7N60A4DS, HGTG7N60A4D.
Please refer to the document for exact specifications by model.
HGT1S7N60A4DS, HGTG7N60A4D, N-Channel IGBT
Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (
HGT1S7N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331.
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