HGT1S7N60A4DS, HGTG7N60A4D N-Channel IGBT

ON Semiconductor

Description

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60.
Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14.

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HGT1S7N60A4DS Datasheet Preview — This datasheet PDF includes multiple part numbers: HGT1S7N60A4DS, HGTG7N60A4D. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HGT1S7N60A4DS, HGTG7N60A4D
Manufacturer: ON Semiconductor ↗
File Size: 537.51 KB
Datasheet: HGTG7N60A4D-ONSemiconductor.pdf
Description: N-Channel IGBT
Note: This datasheet PDF includes multiple part numbers: HGT1S7N60A4DS, HGTG7N60A4D.
Please refer to the document for exact specifications by model.

Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331.

HGT1S7N60A4DS Distributors

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HGTG7N60A4D N-Channel IGBT ON Semiconductor

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