* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGT1S7N60A4S9A Datasheet (246.74 KB)
HGT1S7N60A4S9A
246.74 KB
N-channel igbt.
HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4
Data Sheet
September 2004
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are .
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