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HGT1S7N60C3DS Datasheet - Fairchild Semiconductor

HGT1S7N60C3DS_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGT1S7N60C3DS

Manufacturer:

Fairchild Semiconductor

File Size:

521.04 KB

Description:

Ufs series n-channel igbt.

HGT1S7N60C3DS, UFS Series N-Channel IGBT

HGT1S7N60C3DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in

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