HGT1S7N60C3DS - UFS Series N-Channel IGBT

Product Overview

Fairchild Semiconductor

Part number	HGT1S7N60C3DS
Manufacturer	Fairchild Semiconductor
File Size	521.04 KB
Description	UFS Series N-Channel IGBT
Datasheet	HGT1S7N60C3DS Datasheet
Additional preview pages of the HGT1S7N60C3DS datasheet.

The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |