Part number:
HGT1S7N60C3DS
Manufacturer:
Fairchild Semiconductor
File Size:
521.04 KB
Description:
Ufs series n-channel igbt.
HGT1S7N60C3DS_FairchildSemiconductor.pdf
Datasheet Details
HGT1S7N60C3DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in
HGT1S7N60C3DS_FairchildSemiconductor.pdf
Datasheet Details
HGT1S7N60C3DS
Fairchild Semiconductor
521.04 KB
Ufs series n-channel igbt.
HGT1S7N60C3DS Distributor
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