* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGT1S7N60A4S9A Datasheet (204.51 KB)
HGT1S7N60A4S9A
Fairchild Semiconductor
204.51 KB
600v/ smps series n-channel igbt.
HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4
Data Sheet August 2003
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS g.
📁 Related Datasheet
HGT1S7N60A4S9A N-Channel IGBT (ON Semiconductor)
HGT1S7N60A4S 600V/ SMPS Series N-Channel IGBT (Intersil Corporation)
HGT1S7N60A4DS SMPS Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S7N60A4DS 600V/ SMPS Series N-Channel IGBT (Intersil Corporation)
HGT1S7N60A4DS N-Channel IGBT (ON Semiconductor)
HGT1S7N60B3DS 14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode (Fairchild Semiconductor)
HGT1S7N60B3DS 14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode (Intersil Corporation)
HGT1S7N60B3S 14A/ 600V/ UFS Series N-Channel IGBTs (Intersil Corporation)
HGT1S7N60C3D UFS Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S7N60C3D UFS Series N-Channel IGBT (HARRIS)
