Datasheet Specifications
- Part number
- HGT1S7N60B3DS
- Manufacturer
- Fairchild Semiconductor
- File Size
- 163.69 KB
- Datasheet
- HGT1S7N60B3DS_FairchildSemiconductor.pdf
- Description
- 14A 600V UFS Series N-Channel IGBT
Description
HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. TheHGT1S7N60B3DS Distributors
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