HGT1S7N60B3DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. The
HGT1S7N60B3DS_FairchildSemiconductor.pdf
Datasheet Details
HGT1S7N60B3DS
Fairchild Semiconductor
163.69 KB
14a/ 600v/ ufs series n-channel igbts with anti-parallel hyperfast diode.
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HGT1S7N60B3DS Distributor
