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HGT1S7N60B3DS

14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

HGT1S7N60B3DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. The

HGT1S7N60B3DS Datasheet (163.69 KB)

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Datasheet Details

Part number:

HGT1S7N60B3DS

Manufacturer:

Fairchild Semiconductor

File Size:

163.69 KB

Description:

14a/ 600v/ ufs series n-channel igbts with anti-parallel hyperfast diode.
HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1.

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TAGS

HGT1S7N60B3DS 14A 600V UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode Fairchild Semiconductor

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