* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGT1S7N60A4S Datasheet (168.07 KB)
HGT1S7N60A4S
Intersil Corporation
168.07 KB
600v/ smps series n-channel igbt.
TM
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
Data Sheet June 2000 File Number 4826.2
600V, SMPS Series N-Channel IGBT
The HGTD7N60A4S, HGT1S.
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