HGT1S7N60C3D Datasheet, Igbt, HARRIS

HGT1S7N60C3D Features

• Igbt
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating

PDF File Details

Part number:

HGT1S7N60C3D

Manufacturer:

HARRIS

File Size:

196.80kb

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📄 Datasheet

Description:

Ufs series n-channel igbt. The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs a

HGT1S7N60C3D Application

• Applications ope

TAGS

HGT1S7N60C3D

HARRIS

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