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HGT1S20N60C3R - N-Channel IGBTs

This page provides the datasheet information for the HGT1S20N60C3R, a member of the HGTG20N60C3R N-Channel IGBTs family.

Datasheet Summary

Description

This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications.

These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions.

Features

  • 40A, 600V TJ = 25oC.
  • 600V Switching SOA Capability.
  • Typical Fall Time at TJ = 150oC.
  • . . . 330ns.
  • Short Circuit Rating at TJ = 150oC.
  • . . . 10µs.
  • Low Conduction Loss.

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Datasheet preview – HGT1S20N60C3R

Datasheet Details

Part number HGT1S20N60C3R
Manufacturer HARRIS
File Size 105.67 KB
Description N-Channel IGBTs
Datasheet download datasheet HGT1S20N60C3R Datasheet
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Full PDF Text Transcription

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HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS January 1997 40A, 600V, Rugged UFS Series N-Channel IGBTs Features • 40A, 600V TJ = 25oC • 600V Switching SOA Capability • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns • Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs • Low Conduction Loss Description This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level.
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