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HY1607V - N-Channel MOSFET

This page provides the datasheet information for the HY1607V, a member of the HY1607 N-Channel MOSFET family.

Description

G DS G DS TO-252-2L TO-251-3L Applications

Power Management for Inverter Systems.

Features

  • 68V/70A RDS(ON) = 6.8 m(typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet preview – HY1607V

Datasheet Details

Part number HY1607V
Manufacturer HOOYI
File Size 649.84 KB
Description N-Channel MOSFET
Datasheet download datasheet HY1607V Datasheet
Additional preview pages of the HY1607V datasheet.

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Full PDF Text Transcription

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HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description G DS G DS TO-252-2L TO-251-3L Applications  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET D HY1607 YYXXXJWW G U HY1607 YYXXXJWW G Package Code D : TO-252-2L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.
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