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HY3704B Datasheet Preview

HY3704B Datasheet

N-Channel MOSFET

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HY3704P/B
N-Channel Enhancement Mode MOSFET
Features
40V/176A
RDS(ON) = 3.0 m(typ.) @ VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-263-2L
Applications
Switching application
Power Management for Inverter Systems.
D
G N-Channel MOSFET
Ordering and Marking Information
S
PB
HY3704 HY3704
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
140501




HOOYI

HY3704B Datasheet Preview

HY3704B Datasheet

N-Channel MOSFET

No Preview Available !

HY3704P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
40
±20
175
-55 to 175
176
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
648**
176
120
192
96
0.78
62.5
EAS Avalanche Energy, Single Pulsed
L=0.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=32V
1.09***
Electrical Characteristics
(T
C
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
J
Symbol
Parameter
Test Conditions
HY3704
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS=40V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=88 A
40
-
-
2.0
-
-
--
-1
- 10
3.0 4.0
- ±100
3.0 3.6
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=88 A, VGS=0V
ISD=88 A, dlSD/dt=100A/µs
-
-
-
0.8 1.2
28 -
51 -
Unit
V
µA
V
nA
m
V
ns
nC
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Part Number HY3704B
Description N-Channel MOSFET
Maker HOOYI
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HY3704B Datasheet PDF






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