ATF-10736 fet equivalent, general purpose gallium arsenide fet.
* High Associated Gain: 13.0␣ dB Typical at 4␣ GHz
* Low Bias: VDS = 2 V, IDS= 25␣ mA
* High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz
* Low Noise .
The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operati.
Image gallery
TAGS
Download (Size : 49.70KB)