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MSA0886 Datasheet Preview

MSA0886 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0886
Features
• Usable Gain to 5.5␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
22.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.3␣ dB Typical at 1.0␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices.”
Description
The MSA-0886 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 gain block
above 0.5␣ GHz and can be used as
a high gain transistor below this
frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commer-
cial and industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
86 Plastic Package
ion implantation, and gold metalli-
zation to achieve excellent perfor-
mance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 7.8 V
OUT
5965-9547E
6-426




HP

MSA0886 Datasheet Preview

MSA0886 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0886 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
65 mA
Power Dissipation[2,3]
500 mW
RF Input Power
+13 dBm
Junction Temperature
150°C
Storage Temperature
–65°C to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 80°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,4]:
θjc = 140°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 36 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
NF 50 Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
20.5
dB
dBm
dBm
psec
V
mV/°C
6.2
Typ. Max.
32.5
22.5
2.1:1
1.9:1
3.3
12.5
27.0
140
7.8
–17.0
9.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0886-TR1
1000
7" Reel
MSA-0886-BLK
100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-427


Part Number MSA0886
Description Cascadable Silicon Bipolar MMIC Amplifier
Maker HP
Total Page 4 Pages
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