MSA0185 Datasheet | HP

Features - Cascadable 50 Ω Gain Block - 3 d B Bandwidth: DC to 1.0 GHz - High Gain: 17.5 d B Typical at 0.5 GHz - Unconditionally Stable (k>1) - Low Cost Plastic Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 85 Plastic Package Description The MSA-0185 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 C block OUT Vd = 5 V 5965-9693E 6-258 MSA-0185 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 m A 200 m W +13 d Bm 150°C - 65 to 150°C Thermal Resistance[2,4]: θjc = 105°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 9.5 m W/°C for TC > 129°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. MSA-0185 Electrical Specifications[1], TA = 25°C Symbol GP ∆ GP f3 d B VSWR NF P1 d B IP3 t D Vd d V/d T Parameters and Test Conditions: Id = 17 m A, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 d B Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 d B Gain pression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.5 GHz f = 0.1 to 0.6 GHz Units d B Min. Typ. 18.5 17.5 ± 0.6 1.0 1.3:1 1.3:1 Max. d B...