Datasheet Details
| Part number | HFH12N60 |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 604.75 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 HFH12N60 Datasheet
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| Part number | HFH12N60 |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 604.75 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
HFH12N60 Datasheet
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These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Shantou Huashan Electronic Devices Co.,Ltd.
HFH12N60 N-Channel Enhancement Mode Field Effect Transistor █.
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