* 12A, 600V(See Note), RDS(on) <0.65Ω@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* RoHS compliant █ Maximum Ratin.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,.

HFH10N80

HFH10N90Z

HFH11N90

HFH13N80

HFH18N50S

HFH19N60

HFH20N50

HFH6N90

HFH7N60

HFH7N80

HFH9N90

HF-102

HF-110