• Part: HFH7N60
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: HUASHAN ELECTRONIC
  • Size: 612.70 KB
Download HFH7N60 Datasheet PDF
HFH7N60 datasheet preview
HFH7N60 page 2
Page 2
HFH7N60 page 3
Page 3

HFH7N60 Key Features

  • 7A, 600V(See Note), RDS(on) <1.2Ω@VGS = 10 V
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS pliant
  • Maximum Ratings（Ta=25℃ unless otherwise specified）

Related HUASHAN ELECTRONIC Datasheets

Part Number Description
HFH12N60 N-Channel Enhancement Mode Field Effect Transistor
HFH20N50 N-Channel Enhancement Mode Field Effect Transistor
HFH9N90 N-Channel Enhancement Mode Field Effect Transistor