HFH20N50 Key Features
- 20A, 500V(See Note), RDS(on) <0.26Ω@VGS = 10 V
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Maximum Ratings(Ta=25℃ unless otherwise specified)
| Part Number | Description |
|---|---|
| HFH12N60 | N-Channel Enhancement Mode Field Effect Transistor |
| HFH7N60 | N-Channel Enhancement Mode Field Effect Transistor |
| HFH9N90 | N-Channel Enhancement Mode Field Effect Transistor |