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HFH20N50 - N-Channel Enhancement Mode Field Effect Transistor

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Key Features

  • s.
  • 20A, 500V(See Note), RDS(on).

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Datasheet Details

Part number HFH20N50
Manufacturer HUASHAN ELECTRONIC
File Size 626.51 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFH20N50 Datasheet

Full PDF Text Transcription for HFH20N50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFH20N50. For precise diagrams, and layout, please refer to the original PDF.

Shantou Huashan Electronic Devices Co.,Ltd. HFH20N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon...

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tor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. █ Features • 20A, 500V(See Note), RDS(on) <0.

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