• Part: HFH12N60
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: HUASHAN ELECTRONIC
  • Size: 604.75 KB
Download HFH12N60 Datasheet PDF
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HFH12N60 Key Features

  • 12A, 600V(See Note), RDS(on) <0.65Ω@VGS = 10 V
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS pliant
  • Maximum Ratings（Ta=25℃ unless otherwise specified）

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