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HFH12N60 - N-Channel Enhancement Mode Field Effect Transistor

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Key Features

  • s.
  • 12A, 600V(See Note), RDS(on).

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Datasheet Details

Part number HFH12N60
Manufacturer HUASHAN ELECTRONIC
File Size 604.75 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFH12N60 Datasheet

Full PDF Text Transcription for HFH12N60 (Reference)

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Shantou Huashan Electronic Devices Co.,Ltd. HFH12N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon...

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tor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. █ Features • 12A, 600V(See Note), RDS(on) <0.

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