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HFH20N50 Datasheet - HUASHAN ELECTRONIC

HFH20N50 - N-Channel Enhancement Mode Field Effect Transistor

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche

HFH20N50 Features

* 20A, 500V(See Note), RDS(on)

HFH20N50-HUASHANELECTRONIC.pdf