HYG022N03LQ1V Datasheet N-Channel MOSFET

Manufacturer: HUAYI

Download the HYG022N03LQ1V datasheet PDF. This datasheet also includes the HYG022N03LQ1D variant, as both parts are published together in a single manufacturer document.

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HYG022N03LQ1V n-channel mosfet by HUAYI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HYG022N03LQ1D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HYG022N03LQ1V
Manufacturer	HUAYI
File Size	933.22 KB
Description	N-Channel MOSFET
Datasheet	HYG022N03LQ1V Datasheet

General Description

GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications z Switching Application z Power Management for DC/DC z Battery Protection Ordering and Marking Information N-Channel MOSFET D G022N03 XYMXXXXXX U G022N03 XYMXXXXXX V G022N03 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

Overview

HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.

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