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HYG053N10NS1P - N-Channel MOSFET

General Description

TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Battery management N-Channel MOSFET Ordering and Marking Information P G053N10 XYMXXXXXX B G053N10 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAY

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Datasheet Details

Part number HYG053N10NS1P
Manufacturer HUAYI
File Size 406.93 KB
Description N-Channel MOSFET
Datasheet download datasheet HYG053N10NS1P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Switching application  Power management for inverter systems  Battery management N-Channel MOSFET Ordering and Marking Information P G053N10 XYMXXXXXX B G053N10 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.