MSA-0505 Datasheet | Hewlett-Packard

Features - Cascadable 50 Ω Gain Block - High Output Power: 18.0 d Bm Typical P1 d B at 1.0 GHz - Low Distortion: 29.0 d Bm Typical IP3 at 1.0 GHz - 7.0 d B Typical Gain at 1.0 GHz - Surface Mount Plastic Package - Tape-and-Reel Packaging Option Available[1] Description The MSA-0505 is a high performance medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in mercial systems. The MSA-series is fabricated using Agilent’s 10 GHz f T, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 05 Plastic Package Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Semiconductor Devices.” Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block 3 IN 1 C block OUT Vd = 8.4 V MSA-0505 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 135 m A 1.5 W +25 d Bm 200°C - 65 to 150°C Thermal Resistance[2,4]: θjc = 85°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 11.8 m W/°C for TC > 73°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol P1 d B GP ∆G P f3 d B VSWR IP3 NF t D Vd d V/d T Parameters and Test Conditions: Id = 80 m A, ZO = 50 Ω Output Power at 1 d B Gain pression Power Gain (|S 21| 2) Gain Flatness 3 d B Bandwidth[2] Input VSWR Output VSWR Third Order Intercept Point 50 Ω Noise Figure Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.5 GHz f = 0.1 to 1.5 GHz f...