Description
The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO
Typical Biasing Configuration
R bias VCC > 8 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5.5 V
2
2
MSA-1120 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C
65 to 200°C Thermal Resistance[2,4]: θjc = 60°C/W
Notes: 1. Perma
Features
- High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block.
- 3 dB Bandwidth: 50 MHz to 1.6 GHz.
- 17.5 dBm Typical P1 dB at 0.5 GHz.
- 12 dB Typical 50 Ω Gain at 0.5 GHz.
- 3.5 dB Typical Noise Figure at 0.5 GHz.
- Hermetic Metal/Beryllia Microstrip Package
disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical.