H2N5401 transistor equivalent, pnp epitaxial planar transistor.
* Complements to NPN Type H2N5551
* High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
TO-92
Absolute Maximum Ratings
* Maximum Temperatures Sto.
requiring high breakdown voltages.
Features
* Complements to NPN Type H2N5551
* High Collector-Emitter Breakdown.
The H2N5401 is designed for general purpose applications requiring high breakdown voltages.
Features
* Complements to NPN Type H2N5551
* High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
TO-92
Absolute Maximum Ratings
* Max.
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