* Complements to PNP Type H2N5401
* High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power
H2N5551
Hi-Sincerity Mocroelectronics
52.66 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANA.
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