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H2N5366 Datasheet, Hi-Sincerity Mocroelectronics

H2N5366 Datasheet, Hi-Sincerity Mocroelectronics

H2N5366

datasheet Download (Size : 35.59KB)

H2N5366 Datasheet

H2N5366 transistor

pnp epitaxial planar transistor.

H2N5366

datasheet Download (Size : 35.59KB)

H2N5366 Datasheet

H2N5366 Features and benefits


* This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature .. -55 ~ +150 °.

H2N5366 Application

requiring high breakdown voltages. Spec. No. : HE6275-A Issued Date : 1999.02.01 Revised Date : 2000.09.15 Page No. : 1.

H2N5366 Description

The H2N5366 is designed for general purpose applications requiring high breakdown voltages. Spec. No. : HE6275-A Issued Date : 1999.02.01 Revised Date : 2000.09.15 Page No. : 1/3 Features
* This device was designed for use as general purpose am.

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H2N5366 Page 1 H2N5366 Page 2 H2N5366 Page 3

TAGS

H2N5366
PNP
EPITAXIAL
PLANAR
TRANSISTOR
Hi-Sincerity Mocroelectronics

Manufacturer


Hi-Sincerity Mocroelectronics

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