H2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR
H2N5401 Features
* Complements to NPN Type H2N5551
* High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power