H2N5401, H2N5401_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag.
The H2N5401 is designed for general purpose applications requiring high breakdown voltages. Complements to NPN Type H2N5551.

📥 Download Datasheet

H2N5401 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N5401, H2N5401_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N5401, H2N5401_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 52.59 KB
Datasheet: H2N5401_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N5401, H2N5401_Hi.
Please refer to the document for exact specifications by model.

Features

* Complements to NPN Type H2N5551
* High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power

H2N5401 Distributors

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H2N5401_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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