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H2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

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H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – H2N5401

Datasheet Details

Part number	H2N5401
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	52.59 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5401 Datasheet
Note	This datasheet PDF includes multiple part numbers: H2N5401, H2N5401_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H2N5401 datasheet.

Product details

Description

The H2N5401 is designed for general purpose applications requiring high breakdown voltages.

Features

Complements to NPN Type H2N5551.
High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Bas.

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Published: Mar 22, 2005 |