* Complements to NPN Type H2N5551
* High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power
H2N5401
Hi-Sincerity Mocroelectronics
52.59 KB
Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag.
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