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H2N5366 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the H2N5366 datasheet PDF. This datasheet also covers the H2N5366_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The H2N5366 is designed for general purpose applications requiring high breakdown voltages.

Spec.

No.

Key Features

  • This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -40 V VCEO Collector to E.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N5366_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N5366
Manufacturer Hi-Sincerity Mocroelectronics
File Size 35.59 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N5366 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5366 is designed for general purpose applications requiring high breakdown voltages. Spec. No. : HE6275-A Issued Date : 1999.02.01 Revised Date : 2000.09.15 Page No. : 1/3 Features • This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................