H2N5366 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N5366, a member of the H2N5366_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H2N5366
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	35.59 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5366 Datasheet
Additional preview pages of the H2N5366 datasheet.

The H2N5366 is designed for general purpose applications requiring high breakdown voltages.

Spec.

No.

This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -40 V VCEO Collector to E.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 22, 2005 |