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H2N3906 Datasheet - Hi-Sincerity Mocroelectronics

H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR

The H2N3906 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW <.

H2N3906 Datasheet (51.40 KB)

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Datasheet Details

Part number:

H2N3906

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

51.40 KB

Description:

Pnp epitaxial planar transistor.

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H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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