H2N3906, H2N3906_Hi Datasheet - Hi-Sincerity Mocroelectronics

H2N3906 - PNP EPITAXIAL PLANAR TRANSISTOR

The H2N3906 is designed for general purpose switching and amplifier applications.

Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW <

H2N3906_Hi-SincerityMocroelectronics.pdf

H2N3906 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N3906, H2N3906_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H2N3906, H2N3906_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

51.40 KB

Description:

Pnp epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: H2N3906, H2N3906_Hi.
Please refer to the document for exact specifications by model.

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H2N3906_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics