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H2N3906 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N3906, a member of the H2N3906_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The H2N3906 is designed for general purpose switching and amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW

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Datasheet preview – H2N3906

Datasheet Details

Part number H2N3906
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.40 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N3906 Datasheet
Additional preview pages of the H2N3906 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/5 Description The H2N3906 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)...............................................................................................................
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