H2N3906 - PNP EPITAXIAL PLANAR TRANSISTOR
The H2N3906 is designed for general purpose switching and amplifier applications.
Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW <