H2N3906 Datasheet - Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

H2N3906 General Description

The H2N3906 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW <.

H2N3906 Datasheet (51.40 KB)

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H2N3906

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Hi-Sincerity Mocroelectronics

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Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Pag.

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H2N3906 General Description

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