H2N4124, H2N4124_Hi Datasheet - Hi-Sincerity Mocroelectronics

H2N4124 - NPN EPITAXIAL PLANAR TRANSISTOR

H2N4124 Features

* Complementary to H2N4126

* Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW

Datasheet Details

H2N4124, H2N4124_Hi

Hi-Sincerity Mocroelectronics

45.24 KB

Npn epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: H2N4124, H2N4124_Hi.
Please refer to the document for exact specifications by model.

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