H2N3417 - NPN SILICON TRANSISTOR

This page provides the datasheet information for the H2N3417, a member of the H2N3417_Hi NPN SILICON TRANSISTOR family.

Datasheet Summary

Description

The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H2N3417
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	44.48 KB
Description	NPN SILICON TRANSISTOR
Datasheet	H2N3417 Datasheet
Additional preview pages of the H2N3417 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)..............................................................................

Published: Mar 22, 2005 |