H2N4401 Datasheet, Transistor, Hi-Sincerity Mocroelectronics

H2N4401 Features

• Transistor
• Complementary to H2N4403
• High Power Dissipation: 625 mW at 25°C
• High DC Current Gain: 100-300 at 150mA
• High Breakdown Voltage: 40 V Min. TO-92

PDF File Details

Part number:

H2N4401

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

53.86kb

Download:

📄 Datasheet

Description:

Npn epitaxial planar transistor. The H2N4401 is designed for general purpose switching and amplifier applications. Features

Complementary to H2N4403

<

H2N4401 Application

• Applications Features
• Complementary to H2N4403
• High Power Dissipation: 625 mW at 25°C
• High DC Current Gain: 100-300

TAGS

H2N4401

Hi-Sincerity Mocroelectronics

📁 Related Datasheet

H2N4403 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6221 Issued Date : 1992.09.30 Revised Date : 2004.08.13 Page No. : 1/5 H2N4403 PNP EPITAXIAL PLANA.

H2N4124 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N4124 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.20 Pag.

H2N4126 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag.

H2N3417 - NPN SILICON TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1.

H2N3904 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Pag.

H2N3906 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Pag.

H2N5087 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6210 Issued Date : 1998.02.01 Revised Date : 2005.01.20 Pag.

H2N5088 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N5088 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6227 Issued Date : 1993.04.12 Revised Date : 2005.01.20 Pag.

H2N5089 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6273 Issued Date : 1993.12.08 Revised Date : 2005.01.20 Pag.

H2N5366 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5366 is designed for general purpose applications requi.