* Complementary to H2N4403
* High Power Dissipation: 625 mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150
H2N4401
Hi-Sincerity Mocroelectronics
53.86 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6215 Issued Date : 1992.09.22 Revised Date : 2002.02.22 Page No. : 1/5 H2N4401 NPN EPITAXIAL PLANA.
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