Part number:
H2N4401
Manufacturer:
Hi-Sincerity Mocroelectronics
File Size:
53.86 KB
Description:
Npn epitaxial planar transistor.
H2N4401 Features
* Complementary to H2N4403
* High Power Dissipation: 625 mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150
Datasheet Details
H2N4401
Hi-Sincerity Mocroelectronics
53.86 KB
Npn epitaxial planar transistor.
📁 Related Datasheet
H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N4124 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N3417 NPN SILICON TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N3904 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N5088 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N4401 Distributor