H2N4401 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N4401, a member of the H2N4401_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The H2N4401 is designed for general purpose switching and amplifier applications.

Features

Complementary to H2N4403.
High Power Dissipation: 625 mW at 25°C.
High DC Current Gain: 100-300 at 150mA.
High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and.

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H2N4401
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	53.86 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N4401 Datasheet
Additional preview pages of the H2N4401 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6215 Issued Date : 1992.09.22 Revised Date : 2002.02.22 Page No. : 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4403 • High Power Dissipation: 625 mW at 25°C • High DC Current Gain: 100-300 at 150mA • High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature...................................................................................................................

Published: Mar 22, 2005 |