H2N4401, H2N4401_Hi Datasheet - Hi-Sincerity Mocroelectronics

H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR

H2N4401 Features

* Complementary to H2N4403

* High Power Dissipation: 625 mW at 25°C

* High DC Current Gain: 100-300 at 150mA

* High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150

Datasheet Details

H2N4401, H2N4401_Hi

Hi-Sincerity Mocroelectronics

53.86 KB

Npn epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: H2N4401, H2N4401_Hi.
Please refer to the document for exact specifications by model.

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