H2N4401 - NPN EPITAXIAL PLANAR TRANSISTOR
H2N4401 Features
* Complementary to H2N4403
* High Power Dissipation: 625 mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150