Part number:
H2N60D
Manufacturer:
HAOHAI
File Size:
395.16 KB
Description:
N-channel mosfet
H2N60D
HAOHAI
395.16 KB
N-channel mosfet
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.5nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested
📁 Related Datasheet
H2N60F - N-Channel MOSFET
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FQP2N60C FQPF2N60C
H
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P: TO-220AB F: TO-220FP
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80/ 2.5K/
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4Kpcs/ 5K.
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