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H2N60D, H2N60U Datasheet - HAOHAI

H2N60D N-Channel MOSFET

H2N60D Features

* 　　Originative New Design 　　Superior Avalanche Rugged Technology 　　Robust Gate Oxide Technology 　　Very Low Intrinsic Capacitances 　　Excellent Switching Characteristics 　　Unrivalled Gate Charge: 5.5nC(Typ.) 　　Extended Safe Operating Area 　　Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V 　　100% Avalanche Tested 　　

H2N60U-HAOHAI.pdf

This datasheet PDF includes multiple part numbers: H2N60D, H2N60U. Please refer to the document for exact specifications by model.
H2N60D Datasheet Preview Page 2 H2N60D Datasheet Preview Page 3

Datasheet Details

Part number:

H2N60D, H2N60U

Manufacturer:

HAOHAI

File Size:

395.16 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: H2N60D, H2N60U.
Please refer to the document for exact specifications by model.

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H2N60D H2N60U N-Channel MOSFET HAOHAI

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