H2N6520, H2N6520_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No.: 1/4 H2N6520 PNP EPITAXIAL PLANA.
The H2N6520 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Volta.

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H2N6520 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N6520, H2N6520_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N6520, H2N6520_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 47.70 KB
Datasheet: H2N6520_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N6520, H2N6520_Hi.
Please refer to the document for exact specifications by model.

Features

* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The H2N6520 is complementary to H2N6517 TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* M

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H2N6520_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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