H2N6520
Hi-Sincerity Mocroelectronics
47.70 KB
Pnp epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4
H2N6520
PNP EPITAXIAL PLANA.
* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The H2N6520 is complementary to H2N6517 TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* M
📁 Related Datasheet
H2N6517 - NPN EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No. : 1/5
H2N6517
NPN EPITAXIAL PLANA.
H2N60D - N-Channel MOSFET
(HAOHAI)
2A, 600V, N
H
FQU2N60C FQD2N60C
H2N60U H2N60D
2N60
HAOHAI
U: TO-251 D: TO-252
80/ 2.5K/
2N60 Series
N-Channel MOSFET
4Kpcs/ 5K.
H2N60F - N-Channel MOSFET
(HAOHAI)
2A, 600V, N
2N60 Series
N-Channel MOSFET
FQP2N60C FQPF2N60C
H
H2N60P H2N60F
2N60
HAOHAI
P: TO-220AB F: TO-220FP
50Pcs
1000Pcs.
H2N60P - N-Channel MOSFET
(HAOHAI)
2A, 600V, N
2N60 Series
N-Channel MOSFET
FQP2N60C FQPF2N60C
H
H2N60P H2N60F
2N60
HAOHAI
P: TO-220AB F: TO-220FP
50Pcs
1000Pcs.
H2N60U - N-Channel MOSFET
(HAOHAI)
2A, 600V, N
H
FQU2N60C FQD2N60C
H2N60U H2N60D
2N60
HAOHAI
U: TO-251 D: TO-252
80/ 2.5K/
2N60 Series
N-Channel MOSFET
4Kpcs/ 5K.
H2N6388 - NPN EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714 Issued Date : 1992.12.15 Revised Date : 2004.11.03 Page No. : 1/4
H2N6388
NPN EPITAXIAL PLANA.
