H2N6520 Datasheet, Transistor, Hi-Sincerity Mocroelectronics

H2N6520 Features

• Transistor
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The H2N6520 is complementary to H2N6517 TO-92 Absolute Maximum Ratings

PDF File Details

Part number:

H2N6520

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

47.70kb

Download:

📄 Datasheet

Description:

Pnp epitaxial planar transistor. The H2N6520 is designed for general purpose applications requiring high breakdown voltages. Features

High Collector-Emitte

H2N6520 Application

• Applications requiring high breakdown voltages. Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturat

TAGS

H2N6520

Hi-Sincerity Mocroelectronics

📁 Related Datasheet

H2N6517 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No. : 1/5 H2N6517 NPN EPITAXIAL PLANA.

H2N60D - N-Channel MOSFET (HAOHAI)
2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Series N-Channel MOSFET 4Kpcs/ 5K.

H2N60F - N-Channel MOSFET (HAOHAI)
2A, 600V, N 2N60 Series N-Channel MOSFET FQP2N60C FQPF2N60C H H2N60P H2N60F 2N60 HAOHAI P: TO-220AB F: TO-220FP 50Pcs 1000Pcs.

H2N60P - N-Channel MOSFET (HAOHAI)
2A, 600V, N 2N60 Series N-Channel MOSFET FQP2N60C FQPF2N60C H H2N60P H2N60F 2N60 HAOHAI P: TO-220AB F: TO-220FP 50Pcs 1000Pcs.

H2N60U - N-Channel MOSFET (HAOHAI)
2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Series N-Channel MOSFET 4Kpcs/ 5K.

H2N6388 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6714 Issued Date : 1992.12.15 Revised Date : 2004.11.03 Page No. : 1/4 H2N6388 NPN EPITAXIAL PLANA.

H2N6426 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Pag.

H2N6427 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Pag.

H2N6668 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. H2N6668 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6754 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Pag.

H2N6718L - NPN Transistor (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2004.05.03 Page No. : 1/5 H2N6718L NPN EPITAXIAL PLAN.