Datasheet4U Logo Datasheet4U.com

H2N6427 Datasheet - Hi-Sincerity Mocroelectronics

H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR

Darlington Transistor Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW * Maximum Voltages and Currents (TA=25°C) VCBO Collect.

H2N6427 Datasheet (46.16 KB)

Preview of H2N6427 PDF
H2N6427 Datasheet Preview Page 2 H2N6427 Datasheet Preview Page 3

Datasheet Details

Part number:

H2N6427

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

46.16 KB

Description:

Npn epitaxial planar transistor.

📁 Related Datasheet

H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

H2N60D N-Channel MOSFET (HAOHAI)

H2N60F N-Channel MOSFET (HAOHAI)

H2N60P N-Channel MOSFET (HAOHAI)

H2N60U N-Channel MOSFET (HAOHAI)

H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

TAGS

H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

H2N6427 Distributor