H2N6718L, H2N6718L_Hi NPN Transistor

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6218 Issued Date : 1992.11.25 Revised Date : 2004.05.03 Page No.: 1/5 H2N6718L NPN EPITAXIAL PLAN.
The H2N6718L is designed for general purpose medium power amplifier and switching applications. High Power: 850mW. High C.

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H2N6718L Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N6718L, H2N6718L_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N6718L, H2N6718L_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 51.28 KB
Datasheet: H2N6718L_Hi-SincerityMocroelectronics.pdf
Description: NPN Transistor
Note: This datasheet PDF includes multiple part numbers: H2N6718L, H2N6718L_Hi.
Please refer to the document for exact specifications by model.

Features

* High Power: 850mW
* High Current: 1A TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 850 mW
* Maximum Voltages and

H2N6718L Distributors

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H2N6718L_Hi NPN Transistor Hi-Sincerity Mocroelectronics

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