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H2N6517 Datasheet - Hi-Sincerity Mocroelectronics

H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR

H2N6517 Features

* High Collector-Emitter Breakdown Voltage

* Low Collector-Emitter Saturation Voltage

* The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* M

H2N6517 Datasheet (51.71 KB)

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Datasheet Details

Part number:

H2N6517

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

51.71 KB

Description:

Npn epitaxial planar transistor.

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H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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