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H2N6517, H2N6517_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

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H2N6517 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N6517, H2N6517_Hi. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	H2N6517, H2N6517_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	51.71 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N6517_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: H2N6517, H2N6517_Hi. Please refer to the document for exact specifications by model.

H2N6517 Product details

Description

The H2N6517 is designed for general purpose applications requiring high breakdown voltages.

Features

High Collector-Emitter Breakdown Voltage.
Low Collector-Emitter Saturation Voltage.
The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents.

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Published: Mar 22, 2005 |