H2N6517, H2N6517_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No.: 1/5 H2N6517 NPN EPITAXIAL PLANA.
The H2N6517 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Volta.

📥 Download Datasheet

H2N6517 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N6517, H2N6517_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N6517, H2N6517_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 51.71 KB
Datasheet: H2N6517_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N6517, H2N6517_Hi.
Please refer to the document for exact specifications by model.

Features

* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* M

H2N6517 Distributors

📁 Related Datasheet

H2N60D H2N60F H2N60P H2N60U H2N7002SN

📌 All Tags

H2N6517_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics H2N6517-like datasheet