H2N6668, H2N6668_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.H2N6668 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6754 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Pag.
The H2N6668 is designed for general-purpose amplifier and switching applications. Maximum Temp.

📥 Download Datasheet

H2N6668 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N6668, H2N6668_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N6668, H2N6668_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 40.44 KB
Datasheet: H2N6668_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N6668, H2N6668_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (TA=25°C) TO-220
* Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature +150°C Maximum
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 65 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage

H2N6668 Distributors

📁 Related Datasheet

H2N60D H2N60F H2N60P H2N60U H2N7002SN

📌 All Tags

H2N6668_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics H2N6668-like datasheet