Part number:
H2N60U
Manufacturer:
HAOHAI
File Size:
395.16 KB
Description:
N-channel mosfet.
Datasheet Details
H2N60U Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.5nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested
Datasheet Details
H2N60U
HAOHAI
395.16 KB
N-channel mosfet.
H2N60U Distributor
📁 Related Datasheet
H2N60D N-Channel MOSFET (HAOHAI)
H2N60F N-Channel MOSFET (HAOHAI)
H2N60P N-Channel MOSFET (HAOHAI)
H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)