H2N6718V, H2N6718V_Hi NPN Transistor

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6616 Issued Date : 1993.09.24 Revised Date : 2006.02.20 Pa.
The H2N6718V is designed for general purpose medium power amplifier and switching. Maximum Temperature.

📥 Download Datasheet

H2N6718V Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N6718V, H2N6718V_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N6718V, H2N6718V_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 44.06 KB
Datasheet: H2N6718V_Hi-SincerityMocroelectronics.pdf
Description: NPN Transistor
Note: This datasheet PDF includes multiple part numbers: H2N6718V, H2N6718V_Hi.
Please refer to the document for exact specifications by model.

Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

H2N6718V Distributors

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H2N6718V_Hi NPN Transistor Hi-Sincerity Mocroelectronics

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