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H2N6718V, H2N6718V_Hi - NPN Transistor

H2N6718V Description

HI-SINCERITY MICROELECTRONICS CORP.H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6616 Issued Date : 1993.09.24 Revised Date : 2006.02.20 Pa.
The H2N6718V is designed for general purpose medium power amplifier and switching. Maximum Temperature.

H2N6718V Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H2N6718V, H2N6718V_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N6718V, H2N6718V_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
44.06 KB
Datasheet
H2N6718V_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: H2N6718V, H2N6718V_Hi.
Please refer to the document for exact specifications by model.

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NPN Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N6718V-like datasheet