H2N4126 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N4126, a member of the H2N4126_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The H2N4126 is designed for general purpose switching and amplifier applications.

Features

Complementary to H2N4124.
High Power PT: 625mW at 25°C.
High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H2N4126
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	46.73 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N4126 Datasheet
Additional preview pages of the H2N4126 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/4 Description The H2N4126 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4124 • High Power PT: 625mW at 25°C • High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................

Published: Mar 22, 2005 |