H2N4126 Datasheet - Hi-Sincerity Mocroelectronics

H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR

H2N4126 Features

* Complementary to H2N4124

* High Power PT: 625mW at 25°C

* High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation

Datasheet Details

H2N4126

Hi-Sincerity Mocroelectronics

46.73 KB

Pnp epitaxial planar transistor.

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