H2N4126, H2N4126_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag.
The H2N4126 is designed for general purpose switching and amplifier applications. Complementary to H2N4124. High Power PT.

📥 Download Datasheet

H2N4126 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N4126, H2N4126_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N4126, H2N4126_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 46.73 KB
Datasheet: H2N4126_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N4126, H2N4126_Hi.
Please refer to the document for exact specifications by model.

Features

* Complementary to H2N4124
* High Power PT: 625mW at 25°C
* High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation

H2N4126 Distributors

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H2N4126_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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