H2N4403 Features
* Complementary to H2N4401
* High Power Dissipation: 625mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40V Min. TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150
H2N4403_Hi-SincerityMocroelectronics.pdf
Datasheet Details
H2N4403, H2N4403_Hi
Hi-Sincerity Mocroelectronics
53.87 KB
Pnp epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: H2N4403, H2N4403_Hi.
Please refer to the document for exact specifications by model.
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