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H2N4403 Datasheet - Hi-Sincerity Mocroelectronics

H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR

H2N4403 Features

* Complementary to H2N4401

* High Power Dissipation: 625mW at 25°C

* High DC Current Gain: 100-300 at 150mA

* High Breakdown Voltage: 40V Min. TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150

H2N4403 Datasheet (53.87 KB)

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Datasheet Details

Part number:

H2N4403

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

53.87 KB

Description:

Pnp epitaxial planar transistor.

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H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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