H2N5088, H2N5088_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.H2N5088 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6227 Issued Date : 1993.04.12 Revised Date : 2005.01.20 Pag.
This device was designed for low noise, high gain , general purpose amplifier applications for 1uA to 25mA collector current.

📥 Download Datasheet

H2N5088 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N5088, H2N5088_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N5088, H2N5088_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 45.78 KB
Datasheet: H2N5088_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N5088, H2N5088_Hi.
Please refer to the document for exact specifications by model.

Applications

* for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW
* Maximum Voltages and Currents (TA=25°C

H2N5088 Distributors

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H2N5088_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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