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H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

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H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – H2N5551

Datasheet Details

Part number	H2N5551
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	52.66 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5551 Datasheet
Note	This datasheet PDF includes multiple part numbers: H2N5551, H2N5551_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H2N5551 datasheet.

Product details

Description

The H2N5551 is designed for amplifier transistor.

Features

Complements to PNP Type H2N5401.
High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage 180 V VCEO Collector to Emitter Voltage 160 V VEBO Emitter to Base Voltage 6 V IC Coll.

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Published: Mar 22, 2005 |