H2N5551, H2N5551_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No.: 1/5 H2N5551 NPN EPITAXIAL PLANA.
The H2N5551 is designed for amplifier transistor. Complements to PNP Type H2N5401. High Collector-Emitter Breakdown Volta.

📥 Download Datasheet

H2N5551 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N5551, H2N5551_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N5551, H2N5551_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 52.66 KB
Datasheet: H2N5551_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N5551, H2N5551_Hi.
Please refer to the document for exact specifications by model.

Features

* Complements to PNP Type H2N5401
* High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power

H2N5551 Distributors

📁 Related Datasheet

H2N60D H2N60F H2N60P H2N60U H2N7002SN

📌 All Tags

H2N5551_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics H2N5551-like datasheet