H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR
H2N5551 Features
* Complements to PNP Type H2N5401
* High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power