H2N5551, H2N5551_Hi Datasheet - Hi-Sincerity Mocroelectronics

H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR

H2N5551 Features

* Complements to PNP Type H2N5401

* High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power

Datasheet Details

H2N5551, H2N5551_Hi

Hi-Sincerity Mocroelectronics

52.66 KB

Npn epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: H2N5551, H2N5551_Hi.
Please refer to the document for exact specifications by model.

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