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H2N5089 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N5089, a member of the H2N5089_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

Amplifier Transistor.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW Maximum Voltages and Currents (TA=25°C) VCBO Collect

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Datasheet Details

Part number H2N5089
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.33 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N5089 Datasheet
Additional preview pages of the H2N5089 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6273 Issued Date : 1993.12.08 Revised Date : 2005.01.20 Page No. : 1/4 Description Amplifier Transistor. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................................
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